首頁 >CSD88537ND>規(guī)格書列表
零件型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
CSD88537ND | 絲?。?a target="_blank" title="Marking" href="/88537n/marking.html">88537N;Package:SOIC;CSD88537ND Dual 60-V N-Channel NexFET? Power MOSFET 1Features 1?Ultra-LowQgandQgd ?AvalancheRated ?PbFree ?RoHSCompliant ?HalogenFree 2Applications ?HalfBridgeforMotorControl ?SynchronousBuckConverter 3Description ThisdualSO-8,60V,12.5mΩNexFET?power MOSFETisdesignedtoserveasahalfbridgeinlow c | TI2Texas Instruments 德州儀器美國德州儀器公司 | TI2 | |
CSD88537ND | 采用 SO-8 封裝的雙路、15mΩ、60V、N 溝道 NexFET? 功率 MOSFET; ? 超低 Qg 和 Qgd\n? 雪崩額定值\n? 無鉛 \n? 符合 RoHS 環(huán)保標(biāo)準(zhǔn)\n? 無鹵素; 這款雙路小外形尺寸 (SO)-8,60V,12.5mΩ NexFET 功率 MOSFET 旨在用作低電流電機(jī)控制應(yīng)用中的半橋。 頂視圖要了解所有可用封裝,請見數(shù)據(jù)表末尾的可訂購產(chǎn)品附錄。 RθJA = 60°C/W,這是在一個厚度 0.06 英寸環(huán)氧樹脂 (FR4) 印刷電路板 (PCB) 上的 1 英寸2,2 盎司 的銅焊盤上測得的典型值。最大 RθJL = 20°C/W,脈沖持續(xù)時間 ≤ 100μs,占空比 ≤ 1% | TITexas Instruments 德州儀器美國德州儀器公司 | TI | |
CSD88537ND | CSD88537ND, Dual 60 V N-Channel NexFET Power MOSFETs | TI1Texas Instruments 德州儀器美國德州儀器公司 | TI1 | |
絲?。?a target="_blank" title="Marking" href="/88537n/marking.html">88537N;Package:SOIC;CSD88537ND Dual 60-V N-Channel NexFET? Power MOSFET 1Features 1?Ultra-LowQgandQgd ?AvalancheRated ?PbFree ?RoHSCompliant ?HalogenFree 2Applications ?HalfBridgeforMotorControl ?SynchronousBuckConverter 3Description ThisdualSO-8,60V,12.5mΩNexFET?power MOSFETisdesignedtoserveasahalfbridgeinlow c | TI2Texas Instruments 德州儀器美國德州儀器公司 | TI2 | ||
絲印:88537N;Package:SOIC;CSD88537ND Dual 60-V N-Channel NexFET? Power MOSFET 1Features 1?Ultra-LowQgandQgd ?AvalancheRated ?PbFree ?RoHSCompliant ?HalogenFree 2Applications ?HalfBridgeforMotorControl ?SynchronousBuckConverter 3Description ThisdualSO-8,60V,12.5mΩNexFET?power MOSFETisdesignedtoserveasahalfbridgeinlow c | TI2Texas Instruments 德州儀器美國德州儀器公司 | TI2 | ||
絲?。?a target="_blank" title="Marking" href="/88537n/marking.html">88537N;Package:SOIC;CSD88537ND Dual 60-V N-Channel NexFET? Power MOSFET 1Features 1?Ultra-LowQgandQgd ?AvalancheRated ?PbFree ?RoHSCompliant ?HalogenFree 2Applications ?HalfBridgeforMotorControl ?SynchronousBuckConverter 3Description ThisdualSO-8,60V,12.5mΩNexFET?power MOSFETisdesignedtoserveasahalfbridgeinlow c | TI2Texas Instruments 德州儀器美國德州儀器公司 | TI2 | ||
絲印:88537N;Package:SOIC;CSD88537ND Dual 60-V N-Channel NexFET? Power MOSFET 1Features 1?Ultra-LowQgandQgd ?AvalancheRated ?PbFree ?RoHSCompliant ?HalogenFree 2Applications ?HalfBridgeforMotorControl ?SynchronousBuckConverter 3Description ThisdualSO-8,60V,12.5mΩNexFET?power MOSFETisdesignedtoserveasahalfbridgeinlow c | TI2Texas Instruments 德州儀器美國德州儀器公司 | TI2 | ||
CSD88537ND, Dual 60 V N-Channel NexFET Power MOSFETs | TI1Texas Instruments 德州儀器美國德州儀器公司 | TI1 |
技術(shù)參數(shù)
- Configuration:
Dual
- Rds(on) max at VGS=10 V (mOhms):
15
- IDM - pulsed drain current (Max) (A):
62
- QG typ (nC):
14
- QGD typ (nC):
2.3
- Package (mm):
SO-8
- VGS (V):
20
- VGSTH typ (V):
3
- ID - silicon limited at Tc=25degC (A):
16
- ID - package limited (A):
15
- Logic level:
No
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
TI/德州儀器 |
2223+ |
SOIC-8 |
6400 |
A3-7貨柜原裝正品支持實單 |
詢價 | ||
TI/德州儀器 |
21+ |
NA |
12500 |
只做全新原裝公司現(xiàn)貨特價 |
詢價 | ||
TI/德州儀器 |
25+ |
SOIC-8 |
32360 |
TI/德州儀器全新特價CSD88537ND即刻詢購立享優(yōu)惠#長期有貨 |
詢價 | ||
德州儀器/TI |
24+ |
WSON8 |
2000 |
全新原裝深圳倉庫現(xiàn)貨有單必成 |
詢價 | ||
TI/德州儀器 |
23+ |
SOIC8 |
18204 |
原裝正品代理渠道價格優(yōu)勢 |
詢價 | ||
TI/德州儀器 |
21+ |
SNAIC-8 |
20000 |
一級代理品牌,價格優(yōu)勢原裝正品準(zhǔn)則 |
詢價 | ||
TI |
23+ |
SOIC-8 |
30000 |
全新原裝正品 |
詢價 | ||
TI(德州儀器) |
23+ |
N/A |
12000 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
TI(德州儀器) |
25+ |
5000 |
只做原裝 假一罰百 可開票 可售樣 |
詢價 | |||
Texas Instruments |
25+ |
SOIC8 |
18000 |
TI優(yōu)勢渠道,大量原裝庫存現(xiàn)貨,交期快,歡迎詢價。 |
詢價 |
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