CSD863

EPITAXIAL PLANAR SILICON TRANSISTORS

CSD86311W1723

Dual N-Channel NexFET? Power MOSFET

1FEATURES ?DualN-ChMOSFETs ?CommonSourceConfiguration ?SmallFootprint1.7mm×2.3mm ?UltraLowQgandQgd ?PbFree ?RoHSCompliant ?HalogenFree APPLICATIONS ?BatteryManagement ?BatteryProtection ?DC-DCConverters DESCRIPTION Thedevicehasbeendesignedtodeli

CSD86311W1723.B

Dual N-Channel NexFET? Power MOSFET

1FEATURES ?DualN-ChMOSFETs ?CommonSourceConfiguration ?SmallFootprint1.7mm×2.3mm ?UltraLowQgandQgd ?PbFree ?RoHSCompliant ?HalogenFree APPLICATIONS ?BatteryManagement ?BatteryProtection ?DC-DCConverters DESCRIPTION Thedevicehasbeendesignedtodeli

CSD86330Q3D

采用 3mm x 3mm SON 封裝的 20A、25V、N 溝道同步降壓 NexFET? 功率 MOSFET 電源塊; ? Half-Bridge Power Block\n? 90% System Efficiency at 15 A\n? Up to 20 A Operation\n? High Frequency Operation (Up To 1.5 MHz)\n? High Density – SON 3.3 mm × 3.3 mm Footprint\n? Optimized for 5 V Gate Drive\n? Low Switching Losses\n? Ultra Low Inductance Package\n? RoHS Compliant\n? Halogen Free\n? Pb-Free Terminal Plating\n? APPLICATIONS \n? Synchronous Buck Converters \n? High Frequency Applications\n? High Current, Low Duty Cycle Applications\n \n? Multiphase Synchronous Buck Converters\n? POL DC-DC Converters\n? IMVP, VRM, and VRD Applications;

The CSD86330Q3D NexFET? power block is an optimized design for synchronous buck applications offering high current, high efficiency, and high frequency capability in a small 3.3 mm × 3.3 mm outline. Optimized for 5 V gate drive applications, this product offers a flexible solution capable of offering a high density power supply when paired with any 5 V gate drive from an external controller/driver.

CSD86336Q3D

采用 3mm x 3mm SON 封裝的 20A、25V、N 溝道同步降壓 NexFET? 功率 MOSFET 電源塊; ? 半橋電源塊\n? 12A 電流下系統(tǒng)效率高達(dá) 93.0%\n? 工作電流高達(dá) 20A\n? 高頻工作（高達(dá) 1.5MHz）\n? 高密度小外形尺寸無引線 (SON) 3.3mm × 3.3mm 封裝\n? 針對(duì) 5V 柵極驅(qū)動(dòng)進(jìn)行了優(yōu)化\n? 開關(guān)損耗較低\n? 超低電感封裝\n? 符合 RoHS 標(biāo)準(zhǔn)\n? 無鹵素\n? 無鉛引腳鍍層;

CSD86336Q3D NexFET?電源塊是面向同步降壓 應(yīng)用 的優(yōu)化設(shè)計(jì)方案，能夠以 3.3mm × 3.3mm 的小巧外形提供高電流、高效率以及高頻率性能。該產(chǎn)品針對(duì) 5V 柵極驅(qū)動(dòng) 應(yīng)用進(jìn)行了優(yōu)化，在與來自外部控制器/驅(qū)動(dòng)器的任一 5V 柵極驅(qū)動(dòng)配套使用時(shí)，可提供一套靈活的解決方案來實(shí)現(xiàn)高密度電源。\n\n

CSD86350Q5D

采用 5mm x 6mm SON 封裝的 40A、25V、N 溝道同步降壓 NexFET? 功率 MOSFET 電源塊; ? Half-Bridge Power Block\n? 90% System Efficiency at 25 A\n? Up to 40-A Operation\n? High-Frequency Operation (up to 1.5 MHz)\n? High-Density SON 5-mm × 6-mm Footprint\n? Optimized for 5-V Gate Drive\n? Low-Switching Losses\n? Ultra-Low Inductance Package\n? RoHS Compliant\n? Halogen Free\n? Lead-Free Terminal Plating\n? APPLICATIONS \n? Synchronous Buck Converters \n? High-Frequency Applications\n? High-Current, Low-Duty Cycle Applications\n \n? Multiphase Synchronous Buck Converters\n? POL DC-DC Converters\n? IMVP, VRM, and VRD Applications\n \n All other trademarks are the property of their respective owners;

The CSD86350Q5D NexFET? power block is an optimized design for synchronous buck applications offering high-current, high-efficiency, and high-frequency capability in a small 5-mm × 6-mm outline. Optimized for 5-V gate drive applications, this product offers a flexible solution capable of offering a high-density power supply when paired with any 5-V gate drive from an external controller/driver.

CSD86311W1723

Dual N-Channel NexFET??Power MOSFET

CSD86330Q3D

Synchronous Buck NexFET??Power Block

CSD86330Q3D

Synchronous Buck NexFET??Power Block

CSD86330Q3D_11

Synchronous Buck NexFET??Power Block