CMPA2735075D

75 W, 2.7 - 3.5 GHz, GaN MMIC Power Amplifier; ·80 W Typical PSAT\n·28 V Operation\n·27 dB Small Signal Gain\n·High Breakdown Voltage\n·High Temperature Operation\n;

The CMPA2735075 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved in a small-footprint. Available in die and a flange, screw-down package.\n\n

CMPA2735075D

75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier

Description Cree’sCMPA2735075Disagalliumnitride(GaN)HighElectronMobilityTransistor(HEMT)basedmonolithicmicrowaveintegrated circuit(MMIC).GaNhassuperiorpropertiescomparedtosiliconorgalliumarsenide,includinghigherbreakdownvoltage,higher saturatedelectrondriftvelo

CMPA2735075D

75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier

CMPA2735075F

75W,2.7-3.5GHz,GaNMMIC,PowerAmplifier

CMPA2735075F-AMP

75W,2.7-3.5GHz,GaNMMIC,PowerAmplifier

CMPA2735075F-TB

75W,2.7-3.5GHz,GaNMMIC,PowerAmplifier