CGHV60040D

40-W, 6.0-GHz, GaN HEMT Die; ·Up to 6-GHz operation\n;

Wolfspeed’s CGHV60040D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated-electron-drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.\n

CGHV60040D

40 W, 6.0 GHz, GaN HEMT Die

Description Wolfspeed’sCGHV60040Disagalliumnitride(GaN)High ElectronMobilityTransistor(HEMT).GaNhassuperior propertiescomparedtosiliconorgalliumarsenide, includinghigherbreakdownvoltage,highersaturated electrondriftvelocity,andhigherthermalconductivity. GaNHEMT

CGHV60040D

40 W, 6.0 GHz, GaN HEMT Die

CGHV60040D-GP4

Package：模具；包裝：托盤 類別：分立半導體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：RF MOSFET HEMT 50V DIE

CGHV96050F2

MACOM
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