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CEB80N15

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263&TO-220Ffull-pakforthroughhole.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB80N15

N-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-220Ffull-pakforthroughhole. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB80N15

N Channel MOSFET;

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEF80N15

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-220Ffull-pakforthroughhole. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF80N15

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263&TO-220Ffull-pakforthroughhole.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP80N15

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導體有限公司

CEP80N15

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-220Ffull-pakforthroughhole. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP80N15

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263&TO-220Ffull-pakforthroughhole.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEW80N15

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 150V,80A,RDS(ON)=19mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-247package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

FTK80N15P

150VN-ChannelMOSFETs

FS

First Silicon Co., Ltd

技術參數(shù)

  • BVDSS(V)：

    150

  • Rds(on)mΩ@10V：

    19

  • ID(A)：

    76

  • Qg(nC)@10V(typ)：

    262

  • RθJC(℃/W)：

    0.5

  • Pd(W)：

    300

  • Configuration：

    Single

  • Polarity：

    N

供應商型號品牌批號封裝庫存備注價格
CET/華瑞
2022+
TO-263
50000
原廠代理 終端免費提供樣品
 詢價
CET
23+
TO-263
6000
原裝正品，支持實單
 詢價
CET
2018+
SOP/DIPQFP
800
原裝假一賠十
 詢價
CET/華瑞
2022+
TO-263
30000
進口原裝現(xiàn)貨供應,原裝 假一罰十
 詢價
CET
25+
TO-263
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
NK/南科功率
2025+
TO-263
986966
國產(chǎn)
 詢價
CET/華瑞
2511
TO-263
360000
電子元器件采購降本 30%!盈慧通原廠直采,砍掉中間差價
 詢價
CET
12+
TO-263
15000
全新原裝,絕對正品,公司現(xiàn)貨供應。
 詢價
CET
24+
5000
詢價
CET
24+
TO-263
5000
只做原裝公司現(xiàn)貨
 詢價
更多CEB80N15供應商 更新時間2025-7-28 14:02:00

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