BSS84

Small Signal MOSFET P-Channel

Features: *LowOn-Resistance:10Ω *LowInputCapacitance:30PF *LowOutputCapacitance:10PF *LowThreshole:2.0V *FastSwitchingSpeed:2.5ns Application: *DCtoDCConverter *Cellular&PCMCIACard *CordlessTelephone *PowerManagementinPortableandBatteryetc.

BSS84

P-CHANNEL ENHANCEMENT MODE MOSFET

ThisisaP-channel,enhancement-modeMOSFET,housedintheindustrystandard,SOT-23package.Thisdeviceisidealforportableapplicationswhereboardspaceisatapremium. FEATURES LowOn-Resistance Availableinlead-freeplating(100mattetinfinish) LowGateThresholdVoltage

BSS84

絲?。?a target="_blank" title="Marking" href="/13/marking.html">13*；Package：SOT-23；P-channel enhancement mode vertical DMOS transistor

Generaldescription P-channelenhancementmodeverticalDiffusionMetal-OxideSemiconductor(DMOS)transistorinasmallSurface-MountedDevice(SMD)plasticpackage. Features ■Lowthresholdvoltage ■High-speedswitching ■DirectinterfacetoCMOSand Transistor-TransistorLogic(TTL)

恩XP

BSS84

絲?。?a target="_blank" title="Marking" href="/c84/marking.html">C84；Package：SOT-23；P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Lead,HalogenandAntimonyFree,RoHSCompliant(Note3) ?GreenDevice(Note4) ?QualifiedtoAEC-Q101StandardsforHighReliability

BSS84

SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)

SIPMOS?Small-SignalTransistor ?Pchannel ?Enhancementmode ?LogicLevel ?VGS(th)=-0.8...-2.0V

BSS84

SOT-23 Field Effect Transistors

SOT-23FieldEffectTransistors P-ChannelEnhancement-ModeMOSFETs

BSS84

Energy Efficient

SOT-23Plastic-EncapsulateMOSFETs DESCRIPTION TheseminiaturesurfacemountMOSFETsreducepowerlossconserveenergy,makingthisdeviceidealforuseinsmallpowermanagementcircuitry. FEATURE ●EnergyEfficient ●LowThresholdVoltage ●High-speedSwitching ●MiniatureSurfaceMountP

BSS84

P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channelenhancementmodeverticalD-MOStransistorinaSOT23SMDpackage. FEATURES ?Lowthresholdvoltage ?DirectinterfacetoC-MOS,TTL,etc. ?High-speedswitching ?Nosecondarybreakdown. APPLICATIONS ?Linecurrentinterrupterintelephonesets ?Relay,highspeeda

PHI

BSS84

絲印：SP；Package：SOT-23；P-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisdesignedtominimizeon-stateresistance,provideruggedandreliableperformanceandfastswitching

BSS84

P-Channel Enhancement Mode MOSFET

P-ChannelEnhancementModeMOSFET Feature ●-50V,-0.13A,RDS(ON)=10Ω@VGS=-10V ●HighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SurfaceMountPackage.