BFP740ESD

超低噪聲SiGe:C晶體管，可用于高達12 GHz的頻率

The BFP740ESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT) in a plastic dual emitter standard package with visible leads. The device is fitted with internal protection circuits, which enhance robustness against ESD and high RF input power strongly. T; ·Robust high performance low noise amplifier based on Infineon′s reliable, high volume SiGe:C wafer technology\n ·2 kV ESD robustness (HBM) due to integrated protection circuits\n ·High maximum RF input power of 21 dBm\n ·0.65 dB minimum noise figure typical at 2.4 GHz, 0.9 dB at 5.5 GHz, 6 mA\n ;

BFP740ESD

Robust High Performance Low Noise Bipolar RF Transistor

BFP740ESD

Robust Low Noise Silicon Germanium Bipolar RF Transistor

BFP740ESD_12

Robust Low Noise Silicon Germanium Bipolar RF Transistor

BFP740ESDH6327XTSA1

Robust High Performance Low Noise Bipolar RF Transistor