BFP720ESD

Robust High Performance Low Noise Bipolar RF Transistor

ProductBrief TheBFP720ESDisaSiliconGermaniumCarbon(SiGe:C)NPNHeterojunctionwidebandBipolarRFTransistor(HBT)inaplasticdualemitterstandardpackagewithvisibleleads.Thedeviceisfittedwithinternalprotectioncircuits,whichenhancerobustnessagainstESDandhighRFinput

BFP720ESD

超低噪聲SiGe:C晶體管，可用于高達(dá)12 GHz的頻率; ·Robust high performance low noise amplifier based on Infineon′s reliable, high volume SiGe:C wafer technology\n ·2 kV ESD robustness (HBM) due to integrated protection circuits\n ·High maximum RF input power of 21 dBm\n ·0.65 dB minimum noise figure typical at 2.4 GHz, 0.9 dB at 5.5 GHz, 5 mA\n ·26 dB maximum gain (Gma, Gms) typical at 2.4 GHz, 19.5 dB at 5.5 GHz, 15 mA\n ·22 dBm OIP3 typical at 5.5 GHz, 15 mA\n ·Accurate SPICE GP model available to enable effective design in process (see chapter 6)\n ·Easy to use, Pb- and halogen free (RoHS compliant) standard package with visible leads\n;

The BFP720ESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT) in a plastic dual emitter standard package with visible leads. The device is fitted with internal protection circuits, which enhance robustness against ESD and high RF input power strongly. The device combines robustness with very high RF gain and lowest noise figure at low operation current for use in a wide range of wireless applications. The BFP720ESD is especially well-suited for portable battery-powered applications in which reduced power consumption is a key requirement. Device design supports collector voltages up to 4.2 V.

BFP720F

CHeterojunctionWidebandRFBipolarTransistor

ProductBrief TheBFP720FisaverylownoisewidebandNPNbipolarRFtransistor.ThedeviceisbasedonInfineon’sreliablehighvolumesilicongermaniumcarbon(SiGe:C)heterojunctionbipolartechnology.ThecollectordesignsupportsvoltagesuptoVCEO=4.0VandcurrentsuptoIC=25mA.Th

BFP720F

LowNoiseSiliconGermaniumBipolarRFTransistor

BFP720FESD

RobustHighPerformanceLowNoiseBipolarRFTransistor