BFP650

NPN Silicon Germanium RF Transistor

ProductBrief TheBFP650isahighlinearitywidebandNPNbipolarRFtransistor.ThedeviceisbasedonInfineon’sreliablehighvolumesilicongermaniumcarbon(SiGe:C)heterojunctionbipolartechnology.ThecollectordesignsupportsvoltagesuptoVCEO=4VandcurrentsuptoIC=150mA.With

BFP650

NPN Silicon Germanium RF Transistor

NPNSiliconGermaniumRFTransistor Preliminarydata ?Forhighpoweramplifiers ?Idealforlowphasenoiseoscilators ?Maxim.availableGainGma=21dBat1.8GHz NoisefigureF=0.9dBat1.8GHz ?Goldmetallizationforhighreliability ?70GHzfT-SiliconGermaniumtechnology.

BFP650

High Linearity Silicon Germanium Bipolar RF Transistor

ProductBrief TheBFP650isahighlinearitywidebandNPNbipolarRFtransistor.ThedeviceisbasedonInfineon’sreliablehighvolumesilicongermaniumcarbon(SiGe:C)heterojunctionbipolartechnology.ThecollectordesignsupportsvoltagesuptoVCEO=4VandcurrentsuptoIC=150mA.With

BFP650

高線性硅和SiGe:C（硅鍺：碳）晶體管，可用于高達6 GHz的頻率; ·Highly linear low noise driver amplifier for all RF frontends up to 4.5 GHz\n ·Output compression point OP1dB = 17 dBm at 70 mA, 3V, 2.4 GHz, 50Ω system\n ·Output 3rd order intermodulation point OIP3 = 30 dBm at 70 mA, 3 V, 2.4 GHz, 50 Ω system\n ·Maximum available gain Gma = 17.5 dB at 70 mA, 3V, 2.4 GHz\n ·Minimum noise figure NFmin = 1 dB at 30 mA, 3V, 2.4 GHz\n ·Based on Infineon′s reliable, high volume SiGe:C wafer technology\n ·Easy to use Pb-free (RoHS compliant) standard package with visible leads\n ·Qualification report according to AEC-Q101 available\n;

High Linearity Low Noise SiGe:C NPN RF Transistor

BFP650

High Linearity Low Noise SiGe:C NPN RF Transistor

BFP650E6327

NPN Silicon Germanium RF Transistor

NPNSiliconGermaniumRFTransistor Preliminarydata ?Forhighpoweramplifiers ?Idealforlowphasenoiseoscilators ?Maxim.availableGainGma=21dBat1.8GHz NoisefigureF=0.9dBat1.8GHz ?Goldmetallizationforhighreliability ?70GHzfT-SiliconGermaniumtechnology.

BFP650F

NPN Silicon Germanium RF Transistor

LinearLowNoiseSiGe:CBipolarRFTransistor ?Formediumpoweramplifiersanddriverstages ?BasedonInfineonsreliablehighvolumeSilicon Germaniumtechnology ?HighOIP3andP-1dB ?Idealforlowphasenoiseoscilators ?Maxim.availableGainG ma=21.5dBat1.8GHz Mini

BFP650F

高線性硅和SiGe:C（硅鍺：碳）晶體管，可用于高達6 GHz的頻率; ·For medium power amplifiers and driver stages\n ·High OIP3 and P-1dB\n ·Ideal for low phase noise oscilators\n ·Maxim. available Gain Gma = 21.5 dB at 1.8 GHz\n ·Noise figure F = 0.8 dB at 1.8 GHz\n ·70 GHz fT- Silicon Germanium technology\n ·Pb-free (RoHS compliant) package\n ·Qualification report according to AEC-Q101 available\n;

NPN Silicon Germanium RF Transistor

BFP650H6327

High Linearity Silicon Germanium Bipolar RF Transistor

ProductBrief TheBFP650isahighlinearitywidebandNPNbipolarRFtransistor.ThedeviceisbasedonInfineon’sreliablehighvolumesilicongermaniumcarbon(SiGe:C)heterojunctionbipolartechnology.ThecollectordesignsupportsvoltagesuptoVCEO=4VandcurrentsuptoIC=150mA.With

BFP650_10

High Linearity Low Noise SiGe:C NPN RF Transistor