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BCR116T

NPN Silicon Digital Transistor

NPNSiliconDigitalTransistor ?Switchingcircuit,inverter,interfacecircuit, drivercircuit ?Builtinbiasresistor(R1=4.7k?,R2=47k?) ?For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BCR116W

NPNSiliconDigitalTransistor(Switchingcircuit,inverter,interfacecircuit,drivercircuit)

NPNSiliconDigitalTransistor ?Switchingcircuit,inverter,interfacecircuit, drivercircuit ?Builtinbiasresistor(R1=4.7k?,R2=47k?)

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BCR116W

NPNSiliconDigitalTransistor

NPNSiliconDigitalTransistor ?Switchingcircuit,inverter,interfacecircuit, drivercircuit ?Builtinbiasresistor(R1=4.7k?,R2=47k?) ?For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BCR116W

NPNSiliconDigitalTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BCR116W

NPNSiliconDigitalTransistor

NPNSiliconDigitalTransistor ?Switchingcircuit,inverter,interfacecircuit, drivercircuit ?Builtinbiasresistor(R1=4.7k?,R2=47k?) ?BCR116S:Twointernallyisolated transistorswithgoodmatching inonemultichippackage ?BCR116S:Fororientationinreelsee packa

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BD116

iscSiliconNPNPowerTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BTS116

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=14A@TC=25℃ ·DrainSourceVoltage-VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.1Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BUL116

MEDIUMVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusingMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesignedforuse

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

BUL116D

MEDIUMVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusingMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesignedforuse

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

BULD116D

MEDIUMVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusingMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesignedforuse

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

詳細(xì)參數(shù)

  • 型號：

    BCR116T

  • 制造商：

    INFINEON

  • 制造商全稱：

    Infineon Technologies AG

  • 功能描述：

    NPN Silicon Digital Transistor

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON/英飛凌
24+
SOT-523
45000
熱賣優(yōu)勢現(xiàn)貨
 詢價
Infineon/英飛凌
2019+
SOT323
36000
原盒原包裝 可BOM配套
 詢價
INFINEON
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
Infineon/英飛凌
1937+
SC75
9852
只做進口原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
YQ
SOT-523
185600
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
 詢價
Infineon/英飛凌
24+
20000
全新、原裝、現(xiàn)貨
 詢價
INFINEON
22+
SOT-523
8000
終端可免費供樣,支持BOM配單
 詢價
INFINEON/英飛凌
22+
SOT323
20650
原裝
 詢價
INFINEON/英飛凌
21+
06PB
880000
明嘉萊只做原裝正品現(xiàn)貨
 詢價
INFINEON/英飛凌
24+
NA/
93250
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票
 詢價
更多BCR116T供應(yīng)商 更新時間2025-6-24 17:12:00

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