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BC856SH

65V,100mAPNP/PNPgeneral-purposedoubletransistor

Featuresandbenefits ?Lowcollectorcapacitance ?Lowcollector-emittersaturationvoltage ?Closelymatchedcurrentgain ?Reducesnumberofcomponentsandboardspace ?Nomutualinterferencebetweenthetransistors ?High-temperatureapplicationsupto175°C

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

BC856SH-Q

65V,100mAPNP/PNPgeneral-purposedoubletransistor

Featuresandbenefits ?Lowcollectorcapacitance ?Lowcollector-emittersaturationvoltage ?Closelymatchedcurrentgain ?Reducesnumberofcomponentsandboardspace ?Nomutualinterferencebetweenthetransistors ?High-temperatureapplicationsupto175°C ?QualifiedaccordingtoA

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

BC856S-Q

SMDGeneralPurposePNPTransistors

DiotecDiotec Semiconductor

德歐泰克

BC856S-Q

65V,100mAPNP/PNPgeneral-purposetransistor

Featuresandbenefits ?Lowcollectorcapacitance ?Lowcollector-emittersaturationvoltage ?Closelymatchedcurrentgain ?Reducesnumberofcomponentsandboardspace ?Nomutualinterferencebetweenthetransistors ?QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotive

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

BC856T

PNPSiliconAFTransistor

PNPSiliconAFTransistor Preliminarydata ?ForAFinputstagesanddriverapplications ?Highcurrentgain ?Lowcollector-emittersaturationvoltage ?Complementarytypes:BC846T

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BC856T

PNPgeneralpurposetransistors

DESCRIPTION PNPtransistorinanSC-75plasticpackage. NPNcomplements:BC846TandBC847T. FEATURES ?Lowcurrent(max.100mA) ?Lowvoltage(max.65V). APPLICATIONS ?Generalpurposeswitchingandamplificationespeciallyinportableequipment.

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

BC856T

SURFACEMOUNTPNPSILICONTRANSISTOR

CentralCentral Semiconductor Corp

美國中央半導(dǎo)體

BC856T

PNPGeneralPurposeTransistor

FEATURES ●Lowcurrent(max.100mA). ●Lowvoltage(max.65V). APPLICATIONS ●Generalpurposeswitchingandamplification,especiallyInportableequipment.

BILINGalaxy Semi-Conductor Holdings Limited

銀河微電常州銀河世紀(jì)微電子股份有限公司

BC856T

PNPgeneralpurposetransistors

FEATURES ?Lowcurrent(max.100mA) ?Lowvoltage(max.65V).

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

BC856T_SER

PNPgeneralpurposetransistors

FEATURES ?Lowcurrent(max.100mA) ?Lowvoltage(max.65V). APPLICATIONS ?Generalpurposeswitchingandamplification,especiallyinportableequipment. DESCRIPTION PNPtransistorinanSC-75(SOT416)plasticpackage.NPNcomplements:BC846T;BC847Tseries.

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

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