首頁 >BC847B-E-F>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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NPNgeneralpurposetransistors DESCRIPTION NPNtransistorencapsulatedinanultrasmallSC-89(SOT490)plasticSMDpackage. PNPcomplements:BC856F,BC857FandBC858Fseries. FEATURES ?PowerdissipationcomparabletoSOT23 ?Lowcurrent(max.100mA) ?Lowvoltage(max.65V). APPLICATIONS ?Generalpurposeswitching | PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
NPNSiliconAFTransistors | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
45VNPNSMALLSIGNALTRANSISTOR Features ?BVCEO>45V ?IC=100mAHighCollectorCurrent ?PD=435mWPowerDissipation ?0.48mm2PackageFootprint,16timessmallerthanSOT23 ?0.4mmHeightPackageMinimizingOff-BoardProfile ?ComplementaryPNPTypeBC857BFA ?TotallyLead-Free&FullyRoHSCompliant(Notes1&a | DIODESDiodes Incorporated 美臺半導(dǎo)體 | DIODES | ||
45VNPNSMALLSIGNALTRANSISTOR Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features ?BVCEO>45V ?IC=100mAHighCollectorCurrent ?PD=435mWPowerDissipation ?0.48mm2PackageFootprint,16TimesSmallerthanSOT23 ?0.4mmHeightPac | DIODESDiodes Incorporated 美臺半導(dǎo)體 | DIODES | ||
45VNPNSMALLSIGNALTRANSISTORINDFN0606 Features BVCEO>45V IC=100mAHighCollectorCurrent PD=925mWPowerDissipation 0.36mm2PackageFootprint,40SmallerthanDFN1006 0.4mmHeightPackageMinimizingOff-BoardProfile ComplementaryPNPTypeBC857BZ TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimon | DIODESDiodes Incorporated 美臺半導(dǎo)體 | DIODES | ||
SmallSignalTransistor Features -PowerdissipationPCM:0.20W(@TA=25°C) -CollectorcurrentICM:0.1A -Collector-basevoltageVCBO:BC846=80VBC847=50VBC848=30V -Operatingandstoragejunctiontemperaturerange:TJ,TSTG=-65to+150°C | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
NPNGeneralpurposetransistor Features 1)BVCEO>45V(IC=1mA) 2)ComplementstheBC857BHZG. Application AUDIOFREQUENCYSMALLSIGNALAMPLIFIER | ROHMRohm 羅姆羅姆半導(dǎo)體集團(tuán) | ROHM | ||
GENERALPURPOSETRANSISTORSNPNSILICON DESCRIPTION The BC846AL/BLA847848AL/CLare availableinSOT23package. FEATURES ?Highcurrentgain ?ExcellenthFElinearity ?Lownoisebetween30Hzand15kHz ?ForAFinputstagesanddriverapplications ?AvailableinSOT23package APPLICATIONS ?Ge | AITSEMIAiT Semiconductor Inc. 創(chuàng)瑞科技AiT創(chuàng)瑞科技 | AITSEMI | ||
SMALLSIGNALNPNTRANSISTORWITHCONTROLLEDBASE-EMITTERVOLTAGE | DIODESDiodes Incorporated 美臺半導(dǎo)體 | DIODES | ||
SMALLSIGNALNPNTRANSISTORWITHCONTROLLEDBASE-EMITTERVOLTAGE Features ?LowDeviationinBase-EmitterVoltage ?SurfaceMountPackage ?IdeallySuitedforAutomatedAssemblyProcesses ?LeadFreebyDesign/RoHSCompliant(Note1) ?GreenDevice(Note2) ?QualifiedtoAEC-Q101StandardsforHighReliability | DIODESDiodes Incorporated 美臺半導(dǎo)體 | DIODES |
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