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BAS116HM

SwitchingDiode

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

BAS116HMFH

SwitchingDiode

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

BAS116HY

SwitchingDiode(Lowleakage)

Features Highreliability Smallmoldtype LowIR Application Generalswitching Structure Epitaxialplanar

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

BAS116HYFH

SwitchingDiode(Lowleakage)

Features Highreliability Smallmoldtype LowIR Application Generalswitching Structure Epitaxialplanar

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

BAS116L

SwitchingDiode

Features ?LowLeakageCurrentApplications ?MediumSpeedSwitchingTimes ?Availablein8mmTapeandReel UseBAS116LT1Gtoorderthe7inch/3,000unitreel ?SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC?Q101 Q

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

BAS116L

Low-leakagediode

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

BAS116LS

Low-leakagediode

1.Generaldescription Low-leakagediodeinanultrasmallDFN1006BD-2(SOD882BD)leadlessSurface-MountedDevice (SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits ?Switchingtime:max.trr=3μs ?Lowleakagecurrent:max.IR=5nA ?Repetitivepeakreversevolt

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

BAS116LS-Q

Low-leakagediode

1.Generaldescription Low-leakagediodeinanultrasmallDFN1006BD-2(SOD882BD)leadlessSurface-MountedDevice (SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits ?Switchingtime:max.trr=3μs ?Lowleakagecurrent:max.IR=5nA ?Repetitivepeakreversevolt

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

BAS116QA

Low-leakagediode

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

BAS116RF

225mWSMDSwitchingDiode

FEATURES -Lowpowerloss,highcurrentcapability,lowVF -Surfacedevicetypemounting -Moisturesensitivitylevel1 -MatteTin(Sn)leadfinishwithNickel(Ni)underplate -PbfreeversionandRoHScompliant -PackingcodewithsuffixGmeansgreencompound(halogen-free) MECHANICAL

TSCTaiwan Semiconductor Company, Ltd

臺灣半導(dǎo)體臺灣半導(dǎo)體股份有限公司

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