首頁(yè) >AS2303>規(guī)格書(shū)列表
| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
StriplineMountingFixedAttenuators | HIROSEHirose Electric Company 廣瀨日本廣瀨電機(jī)株式會(huì)社 | HIROSE | ||
Plastic-EncapsulateMOSFETS FEATURE TrenchFETPowerMOSFET APPLICATIONS LoadSwitchforPortableDevices DC/DCConverter | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣電子唯圣電子有限公司 | GWSEMI | ||
InsulKrimp??PiggybackQuickDisconnect,Tab6.35mm(.250)by0.81mm(.032),10-12AWG,YellowInsulator,Tape | MOLEX4Molex Electronics Ltd. 莫仕 | MOLEX4 | ||
InsulKrimp??PiggybackQuickDisconnect,Tab6.35mm(.250)by0.81mm(.032),10-12AWG,YellowInsulator,Tape | MOLEX4Molex Electronics Ltd. 莫仕 | MOLEX4 | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-30V,-9A,RDS(ON)=200m?@VGS=-10V. RDS(ON)=320m?@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-30V,-1.9A,RDS(ON)=150m?(typ)@VGS=-10V. RDS(ON)=230m?(typ)@VGS=-4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-30V,-9A,RDS(ON)=200m?@VGS=-10V. RDS(ON)=320m?@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor | CHENMKOCHENMKO ENTERPRISE CO., LTD. 力勤力勤股份有限公司 | CHENMKO | ||
SOT-23Plastic-EncapsulateMOSFETS | ZPSEMIZP Semiconductor 至尚臻品 | ZPSEMI | ||
P-Channel30-V(D-S)MOSFET | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司 | JIANGSU |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
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