ADRF5141BCCZN-R7中文資料亞德諾數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

GENERAL DESCRIPTION

The ADRF5141 is a reflective, SPDT switch manufactured in the

silicon process. The ADRF5141 is used in transmit and receive

applications with an integrated power limiter on the receive path.

The ADRF5141 operates from 6 GHz to 12 GHz. The RX arm with

the integrated power limiter has a flat leakage of 17 dBm with a low

insertion loss of 1.4 dB at 8 GHz to 11 GHz. The TX arm has an

insertion loss of 0.9 dB at 8 GHz to 11 GHz.

The ADRF5141 draws a low current of 13 μA on the positive supply

of +3.3 V and 360 μA on the negative supply of ?3.3 V. The device

employs complementary metal-oxide semiconductor (CMOS)-/low

voltage transistor to transistor logic (LVTTL)-compatible controls.

The ADRF5141 requires no additional driver circuitry, making it

an ideal alternative to gallium nitride (GaN) and PIN diode-based

switches.

The ADRF5141 comes in a 20-lead, 3.0 mm × 3.0 mm, RoHS-compliant,

land grid array (LGA) package and can operate from ?40°C to +105°C.

FEATURES

? High-power transmit and receive switch with an integrated power

limiter on receive path

? Frequency range: 6 GHz to 12 GHz

? Reflective 50 Ω design

? Low insertion loss

? TX to ANT: 0.9 dB at 8 GHz to 11 GHz

? ANT to RX: 1.4 dB at 8 GHz to 11 GHz

? High isolation: 55 dB typical for TX to RX when TX selected

? High-power handling (TCASE = 50°C)

? Input at TX: pulsed 40 dBm, >100 ns pulse width at 15 duty

cycle

? Input at ANT: pulsed 40 dBm, >100 ns pulse width at 15

duty cycle

? RX flat leakage: 17 dBm

? High linearity

? Input P0.1dB at TX arm: 41 dBm

? Fast switching time: 50 ns

? Fast response and recovery time: <10 ns

? Dual-supply, with no low-frequency spurious

? Positive control interface: CMOS-/LVTTL-compatible

? 20-lead, 3 mm × 3 mm LGA package

? Pin compatible with the ADRF5144

APPLICATIONS

? X-band communications and radars

? Electronic warfare

? Satellite communications

? GaN and PIN diode replacement