ADRF5022

Silicon SPDT Switch, Nonreflective, 100 MHz to 45 GHz

GENERALDESCRIPTION TheADRF5022isanonreflective,single-poledouble-throw(SPDT) switchmanufacturedinthesiliconprocess. TheADRF5022operatesfrom100MHzto45GHzwithatypical insertionlossof2.3dBandisolationof43dB.Thedevicehasan RFinput-powerhandlingcapabilityof

ADRF5022

100 MHz至45 GHz硅SPDT非反射式開關(guān); ? 超寬帶頻率范圍：100 MHz至45 GHz\n\n? 非反射設(shè)計(jì)\n\n? 低插入損耗\n? 1.2 dB（典型值）至18 GHz\n\n? 1.9 dB（典型值）至40 GHz\n\n? 2.3 dB（典型值）至45 GHz\n\n\n\n\n? 高隔離度：43 dB（典型值）至45 GHz\n\n? 高輸入線性度\n? 0.1 dB功率壓縮(P0.1dB)：31 dBm\n\n? 三階交調(diào)點(diǎn)(IP3)：55 dBm;

ADRF5022是一款非反射式、單刀雙擲(SPDT)開關(guān)，采用硅工藝制造。\n\n ADRF5022的工作頻率范圍為100 MHz至45 GHz，典型插入損耗為2.3 dB，隔離度為43 dB。該器件的直通路徑、端接路徑和RF公共端口熱切換分別具有30 dBm、24 dBm和30 dBm的RF輸入功率處理能力。\n\n ADRF5022需采用3.3 V正電源和?3.3 V負(fù)電源供電。該器件采用互補(bǔ)金屬氧化物半導(dǎo)體(CMOS)/低壓晶體管對(duì)晶體管邏輯(LVTTL)兼容控制。\n\n ADRF5022也可以在單個(gè)正電源電壓(VDD)下工作，同時(shí)負(fù)電源電壓(VSS)接地。在此工作條件下，可在降低開關(guān)特性、線性度和功率處理性能的同時(shí)保持小信號(hào)性能。有關(guān)更多詳細(xì)信息，請(qǐng)參閱數(shù)據(jù)手冊(cè)中的表2。\n\n ADRF5022與ADRF5023低頻截止版本引腳兼容，工作頻率范圍為9 kHz至45 GHz。\n\n ADRF5022采用符合RoHS標(biāo)準(zhǔn)的20引腳、3.0 mm × 3.0 mm、基板柵格陣列(LGA)封裝，工作溫度范圍可為?40°C至+105°C。\n\n

ADRF5022BCCZN

Silicon SPDT Switch, Nonreflective, 100 MHz to 45 GHz

GENERALDESCRIPTION TheADRF5022isanonreflective,single-poledouble-throw(SPDT) switchmanufacturedinthesiliconprocess. TheADRF5022operatesfrom100MHzto45GHzwithatypical insertionlossof2.3dBandisolationof43dB.Thedevicehasan RFinput-powerhandlingcapabilityof

ADRF5022BCCZN-R7

Silicon SPDT Switch, Nonreflective, 100 MHz to 45 GHz

GENERALDESCRIPTION TheADRF5022isanonreflective,single-poledouble-throw(SPDT) switchmanufacturedinthesiliconprocess. TheADRF5022operatesfrom100MHzto45GHzwithatypical insertionlossof2.3dBandisolationof43dB.Thedevicehasan RFinput-powerhandlingcapabilityof

ADRF5022-EVALZ

Silicon SPDT Switch, Nonreflective, 100 MHz to 45 GHz

GENERALDESCRIPTION TheADRF5022isanonreflective,single-poledouble-throw(SPDT) switchmanufacturedinthesiliconprocess. TheADRF5022operatesfrom100MHzto45GHzwithatypical insertionlossof2.3dBandisolationof43dB.Thedevicehasan RFinput-powerhandlingcapabilityof