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BX3053

RFAMPLIFIERMODEL

APITECH

API Technologies Corp

CA3053

Differential/CascodeAmplifiersforCommercialandIndustrialEquipmentfromDCto120MHz

Description TheCA3028AandCA3028Baredifferential/cascodeamplifiersdesignedforuseincommunicationsandindustrialequipmentoperatingatfrequenciesfromDCto120MHz.TheCA3028BisliketheCA3028AbutiscapableofpremiumperformanceparticularlyincriticalDCanddifferentialampl

HARRIS

Harris Corporation

CA3053E

Differential/CascodeAmplifiersforCommercialandIndustrialEquipmentfromDCto120MHz

Description TheCA3028AandCA3028Baredifferential/cascodeamplifiersdesignedforuseincommunicationsandindustrialequipmentoperatingatfrequenciesfromDCto120MHz.TheCA3028BisliketheCA3028AbutiscapableofpremiumperformanceparticularlyincriticalDCanddifferentialampl

HARRIS

Harris Corporation

CEB3053A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-90A,RDS(ON)=5.8mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=9.1mW@VGS=-4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED3053A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-87A,RDS(ON)=5.8mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=9.1mW@VGS=-4.5V. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM3053

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-15A,RDS(ON)=7mΩ@VGS=-10V. RDS(ON)=15mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage. ■ESDProtected:4000V

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM3053A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-16.4A,RDS(ON)=5.8mW@VGS=-10V. RDS(ON)=9.1mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM3053-HF

MOSFET

Features -Simpledriverequirement -Lowon-resistance -Fastswitchingspeed

COMCHIPComchip Technology

典琦典琦科技股份有限公司

CEP3053A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-90A,RDS(ON)=5.8mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=9.1mW@VGS=-4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU3053A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-87A,RDS(ON)=5.8mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=9.1mW@VGS=-4.5V. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

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