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CEM9956A

DualN-Channel30-V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFET ?100UISTested ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?SetTopBox ?LowCurrentDC/DC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

CEM9956A

DualN-ChannelEnhancementModeFieldEffectTransistor

FEATURES ●30V,3.7A,RDS(ON)=80m?@VGS=10V.RDS(ON)=110m?@VGS=4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●SurfaceMountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CHM9956AJPT

DualN-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE20VoltsCURRENT48Ampere FEATURE *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. *Smallpackage.(TO-252A) APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications. CONSTRUCTION *N-Ch

CHENMKOCHENMKO ENTERPRISE CO., LTD.

力勤力勤股份有限公司

IRF9956

30V2N-ChannelMOSFET

Features GenerationVTechnology UltraLowOn-Resistance SurfaceMount VeryLowGateChargeandSwitchingLosses FullyAvalancheRated Lead-Free VDS(V)=30V ID=2.2A(VGS=-10V) RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

IRF9956

PowerMOSFET(Vdss=30V,Rds(on)=0.10ohm)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF9956PBF

ULTRALOWONTESISTANCE

IRF

International Rectifier

IRF9956PBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF9956TR

30V2N-ChannelMOSFET

Features GenerationVTechnology UltraLowOn-Resistance SurfaceMount VeryLowGateChargeandSwitchingLosses FullyAvalancheRated Lead-Free VDS(V)=30V ID=2.2A(VGS=-10V) RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

IRF9956TRPBF

ULTRALOWONTESISTANCE

IRF

International Rectifier

NDS9956

DualN-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwit

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

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ADI
24+
NA
6521
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24+
400 Msps 14 Bit DDS EvBd. w/24
6540
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ADI
20+
EvaluationBoard
33680
ADI原裝主營(yíng)-可開原型號(hào)增稅票
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AD
1824+
NA
3
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ADI/亞德諾
25+
20000
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ADI/亞德諾
24+
EvaluationBoard
10000
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Analog Devices
23+
1500
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ADI/亞德諾
22+
66900
原封裝
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ADI/亞德諾
23+
EvaluationBoard
6500
專注配單,只做原裝進(jìn)口現(xiàn)貨
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23+
EvaluationBoard
6500
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更多AD9956SLASHPCB供應(yīng)商 更新時(shí)間2025-6-25 17:00:00

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