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2SJ610

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SJ610

SwitchingRegulator

SwitchingRegulator,DC/DCConverterandMotorDriveApplications ?Lowdrain-sourceON-resistance:RDS(ON)=1.85?(typ.) ?Highforwardtransferadmittance:|Yfs|=18S(typ.) ?Lowleakagecurrent:IDSS=?100μA(VDS=?250V) ?Enhancementmode:Vth=?1.5to?3.5V(VDS=10V,ID=1

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SJ610

SiliconP-ChannelMOSTypeSwitchingRegulator,DC/DCConverterandMotorDriveApplications

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SJ610

TOSHIBAFieldEffectTransistorSiliconP-ChannelMOSType

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

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