2SJ557A中文資料瑞薩數(shù)據(jù)手冊PDF規(guī)格書

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DESCRIPTION

The 2SJ557A is a switching device which can be driven directly

by a 4 V power source.

The 2SJ557A features a low on-state resistance and excellent

switching characteristics, and is suitable for applications such as

power switch of portable machine and so on.

FEATURES

4 V drive available

Low on-state resistance

RDS(on)1 = 100 mΩ MAX. (VGS = ?10 V, ID = ?1.0 A)

RDS(on)2 = 134 mΩ MAX. (VGS = ?4.5 V, ID = ?1.0 A)

RDS(on)3 = 166 mΩ MAX. (VGS = ?4.0 V, ID = ?1.0 A)

Built-in gate protection diode