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2SB1412

絲?。?a target="_blank" title="Marking" href="/tl/marking.html">TL；Package：CPT3；Low Frequency Transistor(-20V,-5A)

Features 1)LowVCE(sat). VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A) 2)ExcellentDCcurrentgaincharacteristics. 3)Complementsthe2SD2098/2SD2118/2SD2097/2SD2166.

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

2SB1412

PNP EPITAXIAL PLANAR TRANSISTOR

Features: *ExcellentDCCurrentGainCharacteristics *LowVCE(Sat)

WEITRON

Weitron Technology

2SB1412

HIGH VOLTAGE SWITCHING TRANSISTOR

■DESCRIPTION TheUTC2SB1412isanepitaxialplanartypePNPsilicontransistor. ■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCUnisonic Technologies

友順友順科技股份有限公司

2SB1412

Low Frequency Transistor

Features ●LowVCE(sat). ●PNPsilicontransistor.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

2SB1412

PNP Silicon Low Frequency Transistor

Features 1)LowVCE(sat). 2)ExcellentDCcurrentgaincharacteristics 3)Complementsthe2SD2118

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

2SB1412

TO-251-3L Plastic-Encapsulate Transistors

TRANSISTOR(PNP) FEATURES PowerAmplifierApplications

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司

2SB1412

isc Silicon NPN Power Transistor

DESCRIPTION ?Smallandslimpackagemakingiteasytomake2SB1205-usedsetsmaller ?Lowcollector-to-emittersaturationvoltage ?Fastswitchingspeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS ?Poweramplifie

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

2SB1412

Silicon PNP transistor in a TO-252 Plastic Package.

Descriptions SiliconPNPtransistorinaTO-252PlasticPackage. Features LowVCE(sat),excellentDCcurrentgaincharacteristics,complementsthe2SD2118. Applications Mediumpoweramplifierapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司

2SB1412

Silicon PNP Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-20V(Min) ·DCCurrentGain- :hFE=82(Min)@IC=-0.5A ·Fastswitchingspeed APPLICATIONS ·Relaydrivers,Highspeedinverters,convertersandother generalhigh-currentswitchingapplications

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

2SB1412

Silicon PNP Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-20V(Min) ·DCCurrentGain- :hFE=82(Min)@IC=-0.5A ·Fastswitchingspeed APPLICATIONS ·Relaydrivers,Highspeedinverters,convertersandother generalhigh-currentswitchingapplications

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

技術(shù)參數(shù)

  • Polarity：

    PNP

  • PCM(W)：

    1

  • IC(A)：

    -5

  • VCBO(V)：

    -30

  • VCEO(V)：

    -20

  • VEBO(V)：

    -6

  • hFEMin：

    82

  • hFEMax：

    390

  • hFE@VCE(V)：

    -2

  • hFE@IC(A)：

    -0.5

  • VCE(sat)(V)：

    -1

  • VCE(sat)@IC(A)：

    -4

  • VCE(sat)@IB(A)：

    -0.1

  • Package：

    TO-251

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
CJ/長(zhǎng)電
25+
SOT-223(8R)
20300
CJ/長(zhǎng)電原裝特價(jià)2SB1412即刻詢購(gòu)立享優(yōu)惠#長(zhǎng)期有貨
 詢價(jià)
ROHM/羅姆
24+
TO-252
4769
只做原廠渠道 可追溯貨源
 詢價(jià)
ROHM
13+
SOT252
3151
原裝正品
 詢價(jià)
CJ/長(zhǎng)晶
20+
SOT-223
120000
原裝正品 可含稅交易
 詢價(jià)
CJ/長(zhǎng)電
2021+
TO-252
9000
原裝現(xiàn)貨,隨時(shí)歡迎詢價(jià)
 詢價(jià)
CJ/長(zhǎng)晶
23+
SOT-223
100586
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費(fèi)!
 詢價(jià)
NK/南科功率
2025+
TO-252
2500
國(guó)產(chǎn)南科平替供應(yīng)大量
 詢價(jià)
ROHM
24+
SOT252
10000
詢價(jià)
ROHM
08PB
SOT252/2.5
1570
全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì)
 詢價(jià)
ROHM
23+
TO252
1600
絕對(duì)全新原裝!優(yōu)勢(shì)供貨渠道!特價(jià)!請(qǐng)放心訂購(gòu)!
 詢價(jià)
更多2SB1412供應(yīng)商 更新時(shí)間2025-7-30 19:27:00

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