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2SB1260

PowerTransistor(-80V,-1A)

FEATURES Highbreakdownvoltageand highcurrent. BVCEO=-80V,IC=-1A GoodhFEVLinearity. LowVCE(sat). Complementsthe2SD1898. APPLICATIONS EpitaxialplanartypePNPsilicontransistor

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

2SB1260

Plastic-encapsulatePNPTransistors

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

魯光電子深圳市魯光電子科技有限公司

2SB1260

PowerTransistor(-80V,-1A)

FEATURES ●Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A ●GoodhFEVLinearity. ●LowVCE(sat). ●Complementsthe2SD1898. APPLICATIONS ●EpitaxialplanartypePNPsilicontransistor

BILINGalaxy Semi-Conductor Holdings Limited

銀河微電常州銀河世紀微電子股份有限公司

2SB1260

SOT-89-3LPlastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●PowerTransistor ●HighVoltageandCurrent ●LowCollector-emittersaturationvoltage ●Complementsthe2SD1898

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

2SB1260

PowerTransistor

ROHMRohm

羅姆羅姆半導體集團

2SB1260

TRANSISTOR(PNP)

FEATURES Powerdissipation PCM:0.5W(Tamb=25℃) Collectorcurrent ICM:-1A Collector-basevoltage V(BR)CBO:-80V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳實業(yè)深圳市永而佳實業(yè)有限公司

2SB1260

Plastic-EncapsulateTransistors

FEATURES ?Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A ?GoodhFEVLinearity. ?LowVCE(sat). ?Complementsthe2SD1898.

HOTTECHGuangdong Hottech Co. Ltd.

合科泰深圳市合科泰電子有限公司

2SB1260

SiliconPNPtransistorinaSOT-89PlasticPackage

Descriptions SiliconPNPtransistorinaSOT-89PlasticPackage. Features Highbreakdownvoltage,goodhFElinearity,lowVCE(sat),complementsthe2SD1898.  Applications Generalpoweramplifierapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍箭電子佛山市藍箭電子股份有限公司

2SB1260

PowerTransistor(??0V,??A)

ROHMRohm

羅姆羅姆半導體集團

2SB1260

PowerTransistor(??0V,??A)

Features 1)Highbreakdownvoltageandhighcurrent.BVCEO=?80V,IC=?1A 2)GoodhFElinearity. 3)LowVCE(sat). 4)Complementsthe2SD1898/2SD1863/2SD1733.

ROHMRohm

羅姆羅姆半導體集團

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