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2N7002KW

Marking：K72；Package：SOT-323；N-Ch Small Signal MOSFET with ESD Protection

FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems, Solid-StateRelaysDriver

SECELECTRONICS

SEC Electronics Inc.

2N7002KW

Marking：72Kc；Package：SOT-323；N-Channel Enhancement Mode MOSFET

Features Lowon-resistance ESDprotectedgateupto2kVHBM High-speedswitching Drivecircuitscanbesimple Paralleluseiseasy

TECHPUBLICTECH PUBLIC Electronics co LTD

臺舟電子臺舟電子股份有限公司

2N7002KW

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers:R

PANJITPan Jit International Inc.

強茂強茂股份有限公司

2N7002KW_R1_00001

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers:R

PANJITPan Jit International Inc.

強茂強茂股份有限公司

2N7002KW_R2_00001

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers:R

PANJITPan Jit International Inc.

強茂強茂股份有限公司

2N7002KW_V01

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers:R

PANJITPan Jit International Inc.

強茂強茂股份有限公司

2N7002KWA

N-Channel Enhancement Mode Field Effect Transistor

Features ?HighdensitycelldesignforLowRDS(ON) ?Voltagecontrolledsmallsignalswitch ?Ruggedandreliable ?Highsaturationcurrentcapability ?LowInput/OutputLeakage ?EpoxymeetsUL94V-0flammabilityrating ?MoistureSensitivityLevel1 ?Halogenfreeavailableuponreques

MCCMicro Commercial Components

美微科美微科半導體股份有限公司

2N7002KW-AU

60V N-Channel Enhancement Mode MOSFET – ESD Protected

Features ?RDS(ON),VGS@10V,ID@500mA

PANJITPan Jit International Inc.

強茂強茂股份有限公司

2N7002KW-AU_R1_000A1

Marking：K72；Package：SOT-323；60V N-Channel Enhancement Mode MOSFET – ESD Protected

Features ?RDS(ON),VGS@10V,ID@500mA

PANJITPan Jit International Inc.

強茂強茂股份有限公司

2N7002KW-CAR

Marking：72K；Package：SOT-323；N-Channel MOSFET

FEATURE HighdensitycelldesignforLowRDS(on) Voltagecontrolledsmallsignalswitch Ruggedandreliable Highsaturationcurrentcapability ESDprotected -CARforautomotiveandotherapplicationsrequiringuniquesiteand controlchangerequirements;AEC-Q101qualifiedandPPAPcap

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

詳細參數(shù)

  • 型號：

    2N7002KW

  • 功能描述：

    MOSFET NCHAN Enhance MOSFET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
ON
21+
SOT323
6000
原裝正品可支持驗貨,歡迎咨詢
 詢價
FAIRCHILD/仙童
24+
SOD-323
45000
熱賣優(yōu)勢現(xiàn)貨
 詢價
ON-SEMI
22+
N/A
3000
原裝正品 香港現(xiàn)貨
 詢價
PANJIT
2025+
SOT-323
32560
原裝優(yōu)勢絕對有貨
 詢價
長電
24+
SOT-323
65000
一級代理/全新現(xiàn)貨/長期供應!!
 詢價
PANJIN
2019+
SOT323
36000
原盒原包裝 可BOM配套
 詢價
CJ/長電
2020+PB
SOT-323
11560
原裝正品 可含稅交易
 詢價
ON
24+
SOT-323-3
36000
原裝現(xiàn)正品可看現(xiàn)貨
 詢價
CJ/長電
2021+
SOT-323
9000
原裝現(xiàn)貨,隨時歡迎詢價
 詢價
CJ
21+
SOT-323
2832
原裝現(xiàn)貨
 詢價
更多2N7002KW供應商 更新時間2025-6-21 10:16:00

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