首頁 >2N7002KT-TP>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
60VN-ChannelMOSFET Description Itutilizesthelatestprocessingtechniquestoachievethehighcelldensityandreducestheon-resistancewithhighrepetitiveavalancherating.Thesefeaturescombinetomakethisdesignanextremelyefficientandreliabledeviceforuseinpowerswitchingapplicationandawideva | Good-Ark GOOD-ARK Electronics | Good-Ark | ||
AdvancedMOSFETprocesstechnology | SILIKRONSilikron Semiconductor Co.,LTD. 新硅能微電子新硅能微電子(蘇州)有限公司 | SILIKRON | ||
NChannelMOSFET | KECKEC CORPORATION KEC株式會社 | KEC | ||
NChannelMOSFET INTERFACEANDSWITCHINGAPPLICATION. FEATURES ?ESDProtected2000V.(HumanBodyModel) ?HighdensitycelldesignforlowRDS(ON). ?Voltagecontrolledsmallsignalswitch. ?SuffixU:QualifiedtoAEC-Q101. ex)2N7002KU-RTK/HU | KECKEC CORPORATION KEC株式會社 | KEC | ||
N-ChannelEnhancementModeFieldEffectTransistor Features ?HighdensitycelldesignforLowRDS(ON) ?Voltagecontrolledsmallsignalswitch ?Ruggedandreliable ?Highsaturationcurrentcapability ?ESDprotectedupto2KV ?EpoxymeetsUL94V-0flammabilityrating ?MoistureSensitivityLevel1 ?Halogenfreeavailableuponrequest | MCCMicro Commercial Components 美微科美微科半導體股份有限公司 | MCC | ||
Plastic-EncapsulateMOSFETS FEATURE ?HighdensitycelldesignforLowRDS(on) ?Voltagecontrolledsmallsignalswitch ?Ruggedandreliable ?Highsaturationcurrentcapability ?ESDprotected APPLICATION ?LoadSwitchforPortableDevices ?DC/DCConverter | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑風微電子廣東佑風微電子有限公司 | YFWDIODE | ||
N-ChannelEnhancementModePowerMOSFET GeneralFeatures VDS=60V,ID=0.3A RDS(ON) | RECTRON Rectron Semiconductor | RECTRON | ||
60VN-ChannelEnhancementModeMOSFET-ESDProtected FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3? ?RDS(ON),VGS@4.5V,IDS@200mA=4? ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
N-ChSmallSignalMOSFETwithESDProtection FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems, Solid-StateRelaysDriver | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
N-ChannelEnhancementModeFieldEffectTransistor ProductSummary ●VDS60V ●ID340mA ●RDS(ON)(atVGS=10V) | YANGJIEYangzhou yangjie electronic co., ltd 揚州揚杰電子揚州揚杰電子科技股份有限公司 | YANGJIE |
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