首頁 >2N7002KB-VB>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
N-ChannelEnhancementModePowerMOSFET GeneralFeatures VDS=60V,ID=0.34A RDS(ON) | RECTRON Rectron Semiconductor | RECTRON | ||
AdvancedMOSFETprocesstechnology FeaturesandBenefits: ?AdvancedMOSFETprocesstechnology ?SpecialdesignedforPWM,loadswitchingand generalpurposeapplications ?Ultralowon-resistancewithlowgatecharge ?Fastswitchingandreversebodyrecovery ?150℃operatingtemperature Description Itutilizesthelatest | SILIKRONSilikron Semiconductor Co.,LTD. 新硅能微電子新硅能微電子(蘇州)有限公司 | SILIKRON | ||
N-ChannelEnhancementModeFieldEffectTransistor Features ?LowonresistanceRDS(ON)?Lowgatethresholdvoltage?Lowinputcapacitance?ESDprotectedupto2KV?-CARforautomotiveandotherapplicationsrequiringuniquesiteandcontrolchangerequirements;AEC-Q101qualifiedandPPAPcapable | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣電子唯圣電子有限公司 | GWSEMI | ||
MOSFET Features -Voltagecontrolledsmallsignalswitch. -Lowinputcapacitance. -Fastswitchingspeed. -Lowinput/outputleakage. | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
NChannelMOSFETESDProtected2000V INTERFACEANDSWITCHINGAPPLICATION. FEATURES ?ESDProtected2000V. ?HighdensitycelldesignforlowRDS(ON). ?Voltagecontrolledsmallsignalswitch. ?Ruggedandreliable. ?Highsaturationcurrentcapablity. | KECKEC CORPORATION KEC株式會社 | KEC | ||
60VN-ChannelEnhancementModeMOSFET-ESDProtected FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3? ?RDS(ON),VGS@4.5V,IDS@200mA=4? ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelaysDrivers:Re | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
DualN-ChannelMOSFET Features: *LowOn-Resistance *FastSwitchingSpeed *Low-voltagedrive *Easilydesigneddrivecircuits *ESDProtected:2000V MechanicalData: *Case:SOT-363,MoldedPlastic *CaseMaterial-ULFlammabilityRating94V-0 *Terminals:SolderableperMIL-STD-202,Method208 *Weight:0.006gr | WEITRON Weitron Technology | WEITRON | ||
DualN-ChannelSmallSignalMOSFET FEATURES ●Lowon-resistance ●FastswitchingSpeed ●Low-voltagedrive ●Easilydesigneddrivecircuits ●ESDprotected:2000V MECHANICALDATA ●Case:SOT-363 ●CaseMaterial-ULflammabilityrating94V-0 ●Terminals:SolderableperMIL-STD-202,Method208 ●Weight:0.006grams(approx.) | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
DualN-ChannelEnhancementModeFieldEffectTransistor ProductSummary ●VDS60V ●ID0.34A ●RDS(ON)(atVGS=10V) | YANGJIEYangzhou yangjie electronic co., ltd 揚州揚杰電子揚州揚杰電子科技股份有限公司 | YANGJIE | ||
DualN-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體（臺灣）有限公司 | VBSEMI |
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