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2N7002KA

NChannelMOSFET

INTERFACEANDSWITCHINGAPPLICATION. FEATURES ?ESDProtected2000V. ?HighdensitycelldesignforlowRDS(ON). ?Voltagecontrolledsmallsignalswitch. ?Ruggedandreliable. ?Highsaturationcurrentcapablity. ?SuffixU:QualifiedtoAEC-Q101. ex)2N7002KA-RTK/HU.

KECKEC CORPORATION

KEC株式會(huì)社

2N7002KA

NChannelMOSFETESDProtected2000V

KECKEC CORPORATION

KEC株式會(huì)社

2N7002KA

N-ChannelMOSFET

Features ?EpoxymeetsUL94V-0flammabilityrating ?MoistureSensitivityLevel1 ?HighdensitycelldesignforlowRDS(ON) ?Voltagecontrolledsmallsignalswitch ?Ruggedandreliable ?ESDProtectedupto2.5KV(HBM) ?Halogenfreeavailableuponrequestbyaddingsuffix-HF

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

2N7002KA

N-ChannelEnhancementModePowerMOSFET

GeneralFeatures VDS=60V,ID=0.32A RDS(ON)

RECTRON

Rectron Semiconductor

2N7002K-AU

60VN-ChannelEnhancementModeMOSFET-ESDProtected

FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

2N7002KB

MainProductCharacteristics

SILIKRONSilikron Semiconductor Co.,LTD.

新硅能微電子新硅能微電子(蘇州)有限公司

2N7002KB

60VN-ChannelMOSFET

Description Itutilizesthelatestprocessingtechniquestoachievethehighcelldensityandreducestheon-resistancewithhighrepetitiveavalancherating.Thesefeaturescombinetomakethisdesignanextremelyefficientandreliabledeviceforuseinpowerswitchingapplicationandawideva

Good-Ark

GOOD-ARK Electronics

2N7002KB

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

2N7002KB

N-ChannelEnhancementModePowerMOSFET

GeneralFeatures VDS=60V,ID=0.34A RDS(ON)

RECTRON

Rectron Semiconductor

2N7002KB

N-ChannelEnhancementModePowerMOSFET

GeneralFeatures VDS=60V,ID=0.34A RDS(ON)

RECTRON

Rectron Semiconductor

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