首頁 >2N7002HG>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
MOSFET Features -Drivecircuitscanbesimple. -Lowon-resistance. -ESDprotectedgateupto2KVHBM. -High-speedswitching. -Paralleluseiseasy. | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
60V,dualN-channelTrenchMOSFET 1.Generaldescription DualN-channelenhancementmodeField-EffectTransistor(FET)inaverysmallSOT363(SC-88) Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits ?Logic-levelcompatible ?Veryfastswitching ?TrenchMOSFETtechnolog | NEXPERIANexperia B.V. All rights reserved 安世安世半導體(中國)有限公司 | NEXPERIA | ||
WedeclarethatthematerialofproductcompliancewithRoHSrequirementsandHalogenFree. FEATURES ●Wedeclarethatthematerialofproductcompliancewith RoHSrequirementsandHalogenFree. ●ESDProtected:1000V | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯電子上海雷卯電子科技有限公司 | LEIDITECH | ||
60V,N-channelTrenchMOSFET 1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaverysmallSOT323(SC-70) Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits ?Logic-levelcompatible ?Veryfastswitching ?TrenchMOSFETtechnology ? | NEXPERIANexperia B.V. All rights reserved 安世安世半導體(中國)有限公司 | NEXPERIA | ||
60VN-ChannelEnhancementModeMOSFET-ESDProtected FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3? ?RDS(ON),VGS@4.5V,IDS@200mA=4? ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
N-Channel60-V(D-S)MOSFET DESCRIPTION Theattachedspicemodeldescribesthetypicalelectricalcharacteristicsofthen-channelverticalDMOS.Thesubcircuitmodelisextractedandoptimizedoverthe?55to125°Ctemperaturerangesunderthepulsed0-Vto10-Vgatedrive.Thesaturatedoutputimpedanceisbestfitatthe | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits ?LowOn-Resistance ?LowInputCapacitance ?FastSwitchingSpeed | DIODESDiodes Incorporated 美臺半導體 | DIODES | ||
NCEN-ChannelEnhancementModePowerMOSFET GENERALFEATURES ●VDS=60V,ID=0.3A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 無錫新潔能股份無錫新潔能股份有限公司 | NCEPOWER | ||
N-ChannelEnhancementModeFieldEffectTransistor Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?PbFree/RoHSCompliant ?ESDHBM=2000V(Typical:3000V)asperJESD22A114 andESDCDM=2000VasperJESD2 | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
DirectLogic-LevelInterface:TTL/CMOS GENERALFEATURES ●VDS=60V,ID=0.3A RDS(ON) | SILIKRONSilikron Semiconductor Co.,LTD. 新硅能微電子新硅能微電子(蘇州)有限公司 | SILIKRON |
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