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2N7002HM-HF

MOSFET

Features -Drivecircuitscanbesimple. -Lowon-resistance. -ESDprotectedgateupto2KVHBM. -High-speedswitching. -Paralleluseiseasy.

COMCHIPComchip Technology

典琦典琦科技股份有限公司

2N7002HS

60V,dualN-channelTrenchMOSFET

1.Generaldescription DualN-channelenhancementmodeField-EffectTransistor(FET)inaverysmallSOT363(SC-88) Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits ?Logic-levelcompatible ?Veryfastswitching ?TrenchMOSFETtechnolog

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

2N7002HW

WedeclarethatthematerialofproductcompliancewithRoHSrequirementsandHalogenFree.

FEATURES ●Wedeclarethatthematerialofproductcompliancewith RoHSrequirementsandHalogenFree. ●ESDProtected:1000V

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

2N7002HW

60V,N-channelTrenchMOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaverysmallSOT323(SC-70) Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits ?Logic-levelcompatible ?Veryfastswitching ?TrenchMOSFETtechnology ?

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

2N7002K

60VN-ChannelEnhancementModeMOSFET-ESDProtected

FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3? ?RDS(ON),VGS@4.5V,IDS@200mA=4? ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

2N7002K

N-Channel60-V(D-S)MOSFET

DESCRIPTION Theattachedspicemodeldescribesthetypicalelectricalcharacteristicsofthen-channelverticalDMOS.Thesubcircuitmodelisextractedandoptimizedoverthe?55to125°Ctemperaturerangesunderthepulsed0-Vto10-Vgatedrive.Thesaturatedoutputimpedanceisbestfitatthe

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

2N7002K

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits ?LowOn-Resistance ?LowInputCapacitance ?FastSwitchingSpeed

DIODESDiodes Incorporated

美臺半導(dǎo)體

2N7002K

NCEN-ChannelEnhancementModePowerMOSFET

GENERALFEATURES ●VDS=60V,ID=0.3A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

2N7002K

N-ChannelEnhancementModeFieldEffectTransistor

Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?PbFree/RoHSCompliant ?ESDHBM=2000V(Typical:3000V)asperJESD22A114 andESDCDM=2000VasperJESD2

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

2N7002K

DirectLogic-LevelInterface:TTL/CMOS

GENERALFEATURES ●VDS=60V,ID=0.3A RDS(ON)

SILIKRONSilikron Semiconductor Co.,LTD.

新硅能微電子新硅能微電子(蘇州)有限公司

詳細(xì)參數(shù)

  • 型號：

    2N7002F

  • 功能描述：

    MOSFET N-CH TRNCH 60V .475A

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

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更多2N7002F供應(yīng)商 更新時間2025-6-24 22:59:00

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