首頁 >2N7002CK-VB>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
N-CHANNELENHANCEMENTMODEMOSTRANSISTOR | SEME-LAB Seme LAB | SEME-LAB | ||
60VN-ChannelMOSFET | CITCChip Integration Technology Corporation 竹懋科技竹懋科技股份有限公司 | CITC | ||
DUALN-CHANNELENHANCEMENTMODEMOSTRANSISTOR | SEME-LAB Seme LAB | SEME-LAB | ||
DualN-ChannelEnhancementMOSFET | CHENMKOCHENMKO ENTERPRISE CO., LTD. 力勤力勤股份有限公司 | CHENMKO | ||
Plastic-EncapsulatedTransistors MOSFET(N-Channel) FEATURES Powerdissipation PD:0.2W(Tamb=25℃) Collectorcurrent ID:115mA Collector-basevoltage VDS:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TELTokyo Electron Ltd. 東電電子東京電子有限公司 | TEL | ||
60VN-ChannelEnhancementModeMOSFET | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
60VN-ChannelEnhancementModeMOSFET DUALN-CHANNELENHANCEMENTMODEMOSFETS Thisspace-efficientdevicecontainstwoelectrically-isolatedN-Channelenhancement-modeMOSFETs.ItcomesinaverysmallSOT-363(SC70-6L)package.Thisdeviceisidealforportableapplicationswhereboardspaceisatapremium. FEATURES ●LowOn-Re | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(Rds(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?LowGateThresholdVoltage ?Lo | DIODESDiodes Incorporated 美臺半導體 | DIODES | ||
DualN-ChannelMOSFET Features: *LowOn-Resistance:7.5Ω *LowInputCapacitance:22PF *LowOutputCapacitance:11PF *LowThreshole:1.5V(TYE) *FastSwitchingSpeed:11ns MechanicalData: *Case:SOT-363,MoldedPlastic *CaseMaterial-ULFlammabilityRating94V-0 *Terminals:SolderableperMIL-STD- | WEITRON Weitron Technology | WEITRON | ||
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR | DIODESDiodes Incorporated 美臺半導體 | DIODES |
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