首頁 >2N7002A-RTK/PDT>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
N-CHANNELENHANCEMENTMODEMOSFET Features ?N-ChannelMOSFET ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?ESDProtectedupto1kV ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3) ?QualifiedtoAEC-Q101Stand | DIODESDiodes Incorporated 美臺半導體 | DIODES | ||
N-CHannelEnhancementModeMOSFET | KODENSHIKODENSHI_AUK CORP. 可天士可天士光電子集團 | KODENSHI | ||
SOT-23Plastic-EncapsulateMOSFETS FEATURE *HighdensitycelldesignforlowRDS(ON) *Voltagecontrolledsmallsignalswitch *Ruggedandreliable *Highsaturationcurrentcapability | UMWGuangdong Youtai Semiconductor Co., Ltd. 友臺半導體廣東友臺半導體有限公司 | UMW | ||
SOT-23Plastic-EncapsulateMOSFETS FEATURE HighdensitycelldesignforlowRDS(ON) Voltagecontrolledsmallsignalswitch Ruggedandreliable Highsaturationcurrentcapability | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導體 | EVVOSEMI | ||
N-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體（臺灣）有限公司 | VBSEMI | ||
60VN-ChannelEnhancementModeMOSFET Description ●TrenchPowerMVMOSFETtechnology ●Voltagecontrolledsmallsignalswitch ●LowinputCapacitance ●FastSwitchingSpeed ●LowInput/OutputLeakage GeneralFeatures ●VDS60V ●ID300mA ●RDS(ON)(atVGS=10V) | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯電子上海雷卯電子科技有限公司 | LEIDITECH | ||
60V,350mAN-channelTrenchMOSFET 1.1Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmall SOT23(TO-236AB)Surface-MountedDevice(SMD)plasticpackageusing TrenchMOSFETtechnology. 1.2Featuresandbenefits Logic-levelcompatible Veryfastswitching TrenchMOSFETtechnology ESDpr | NEXPERIANexperia B.V. All rights reserved 安世安世半導體(中國)有限公司 | NEXPERIA | ||
60VN-ChannelMosfet Application Directlogic-levelinterface:TTL/CMOS Drivers:relays,solenoids,lamps,hammersdisplay, memories,transistors,etc. Batteryoperatedsystems Solid-staterelays | TECHPUBLICTECH PUBLIC Electronics co LTD 臺舟電子臺舟電子股份有限公司 | TECHPUBLIC | ||
60V,350mAN-channelTrenchMOSFET 1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT23(TO-236AB) Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits ?Logic-levelcompatible ?Veryfastswitching ?TrenchMOSFETtechnology ?ESD | NEXPERIANexperia B.V. All rights reserved 安世安世半導體(中國)有限公司 | NEXPERIA | ||
60V,450mAN-channelTrenchMOSFET | PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips |
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