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2N7002

N-Channel MOSFET

Features ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability Drain-SourcevoltageVDS60V DrainCurrentID115mA PowerDissipationPD225mW

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

2N7002

NCE N-Channel Enhancement Mode Power MOSFET

GENERALFEATURES ●VDS=60V,ID=0.115A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

2N7002

Marking：WA；Package：SOT-23；FIELD EFFECT TRANSISTOR

INTERFACEANDSWITCHINGAPPLICATION. FEATURES HighdensitycelldesignforlowRDS(ON). Voltagecontrolledsmallsignalswitch. Ruggedandreliable. Highsaturationcurrentcapablity.

KECKEC CORPORATION

KEC株式會社

2N7002

N-channel vertical D-MOS transistor

Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusing TrenchMOS?technology. Productavailability:2N7002inSOT23. Features TrenchMOS?technology Veryfastswitching Logiclevelcompatible Subminiaturesurfacemountpackage. Applic

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

2N7002

N-Channel MOSFET

Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF· ?EpoxymeetsUL94V-0flammabilityrating ?MoistureSensitivityLevel1 ?AdvancedTrenchProcessTechnology ?HighInputImpedance ?HighSpeedSwitching ?CMOSLogicCompatibleInput ?Marking:7002/S72 ··

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

2N7002

Plastic-Encapsulated Transistors

FEATURES Powerdissipation PD:0.35W(Tamb=25℃) Draincurrent ID:250mA Drain-Sourcevoltage VDS:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TELTokyo Electron Ltd.

東電電子東京電子有限公司

2N7002

Marking：3P；Package：SOT-23；Small Signal MOSFET Transistor

SmallSignalMOSFETTransistor FEATURES ●HighDensityCellDesignForLowRDS(ON)。 ●VoltageControlledSmallSwitch. ●RuggedandReliable. ●HighSaturationCurrentCapability. APPLICATIONS ●N-channelenhancementmodeeffecttransistor. ●Switchingapplication.

BILINGalaxy Semi-Conductor Holdings Limited

銀河微電常州銀河世紀(jì)微電子股份有限公司

2N7002

OptiMOS??Small-Signal-Transistor

OptiMOSSmall-Signal-Transistor Features ?N-channel ?Enhancementmode ?Logiclevel ?Avalancherated ?fastswitching ?Pb-freelead-plating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

2N7002

N-Channel Enhancement-Mode Vertical DMOS FET

GeneralDescription TheSupertex2N7002isanenhancement-mode(normallyoff)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andthehi

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

2N7002

Marking：7002；Package：SOT-23；SOT- 23 Plastic-Encapsulate MOSFETS

FEATURE *HighdensitycelldesignforlowRDS(ON) *Voltagecontrolledsmallsignalswitch *Ruggedandreliable *Highsaturationcurrentcapability

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司

詳細(xì)參數(shù)

  • 型號：

    2N7002

  • 功能描述：

    MOSFET N-CHANNEL 60V 115mA

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
恩XP
18+
SOT-23
54000
只做原裝正品，賣元器件不賺錢交個(gè)朋友！
 詢價(jià)
恩XP
15+
SOT23
30000
全新原裝
 詢價(jià)
2015+
50
公司現(xiàn)貨庫存
 詢價(jià)
2015+
50
公司現(xiàn)貨庫存
 詢價(jià)
ON
17+18+
SOT23
488459
原廠原裝,本地現(xiàn)貨庫存,假一罰十!
 詢價(jià)
長電
11+
SOT23
50000
深圳現(xiàn)貨
 詢價(jià)
ON
21+
SOT23
30000
只做原裝 有單來談
 詢價(jià)
INFINEON/英飛凌
24+
SOT-23
45000
熱賣優(yōu)勢現(xiàn)貨
 詢價(jià)
恩XP
24+/25+
SOT236
99000
100%原裝正品真實(shí)庫存,支持實(shí)單
 詢價(jià)
ON-SEMI
22+
N/A
9000
原裝正品 香港現(xiàn)貨
 詢價(jià)
更多2N7002供應(yīng)商 更新時(shí)間2025-6-27 14:11:00

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